Each word can be accessed by a binary address of N bits, making it possible to store 2N words in the memory. == History == In the early 1940s, memory technology often permitted a capacity of a few bytes.
Presper Eckert in the early 1940s.
The Williams tube was nevertheless frustratingly sensitive to environmental disturbances. Efforts began in the late 1940s to find non-volatile memory.
Viehe and An Wang in the late 1940s, and improved by Jay Forrester and Jan A.
Delay line memory was limited to a capacity of up to a few hundred thousand bits to remain efficient. Two alternatives to the delay line, the Williams tube and Selectron tube, originated in 1946, both using electron beams in glass tubes as means of storage.
Rajchman in the early 1950s, before being commercialised with the Whirlwind computer in 1953.
Rajchman in the early 1950s, before being commercialised with the Whirlwind computer in 1953.
Programmable read-only memory (PROM) was invented by Wen Tsing Chow in 1956, while working for the Arma Division of the American Bosch Arma Corporation.
Atalla and Dawon Kahng at Bell Labs in 1959, enabled the practical use of metal–oxide–semiconductor (MOS) transistors as memory cell storage elements.
Magnetic-core memory was the dominant form of memory until the development of MOS semiconductor memory in the 1960s. Semiconductor memory began in the early 1960s with bipolar memory, which used bipolar transistors.
While bipolar memory offered improved performance over magnetic-core memory, it could not compete with the lower price of magnetic-core, which remained dominant up until the late 1960s.
Bipolar semiconductor memory made from discrete devices was first shipped by Texas Instruments to the United States Air Force in 1961.
Bipolar SRAM was invented by Robert Norman at Fairchild Semiconductor in 1963, followed by the development of MOS SRAM by John Schmidt at Fairchild in 1964.
MOS memory was developed by John Schmidt at Fairchild Semiconductor in 1964.
Bipolar SRAM was invented by Robert Norman at Fairchild Semiconductor in 1963, followed by the development of MOS SRAM by John Schmidt at Fairchild in 1964.
The first bipolar semiconductor memory IC chip was the SP95 introduced by IBM in 1965.
Commercial use of SRAM began in 1965, when IBM introduced their SP95 SRAM chip for the System/360 Model 95. Toshiba introduced bipolar DRAM memory cells for its Toscal BC-1411 electronic calculator in 1965.
In 1967, Dennard filed a patent under IBM for a single-transistor DRAM memory cell, based on MOS technology.
In 1967, Dawon Kahng and Simon Sze of Bell Labs proposed that the floating gate of a MOS semiconductor device could be used for the cell of a reprogrammable read-only memory (ROM), which led to Dov Frohman of Intel inventing EPROM (erasable PROM) in 1971.
The development of silicon-gate MOS integrated circuit (MOS IC) technology by Federico Faggin at Fairchild in 1968 enabled the production of MOS memory chips.
NMOS memory was commercialized by IBM in the early 1970s.
MOS memory overtook magnetic core memory as the dominant memory technology in the early 1970s. The two main types of volatile random-access memory (RAM) are static random-access memory (SRAM) and dynamic random-access memory (DRAM).
This led to the first commercial DRAM IC chip, the Intel 1103, in October 1970.
In 1967, Dawon Kahng and Simon Sze of Bell Labs proposed that the floating gate of a MOS semiconductor device could be used for the cell of a reprogrammable read-only memory (ROM), which led to Dov Frohman of Intel inventing EPROM (erasable PROM) in 1971.
EEPROM (electrically erasable PROM) was developed by Yasuo Tarui, Yutaka Hayashi and Kiyoko Naga at the Electrotechnical Laboratory in 1972.
Flash memory was invented by Fujio Masuoka at Toshiba in the early 1980s.
Masuoka and colleagues presented the invention of NOR flash in 1984, and then NAND flash in 1987.
Masuoka and colleagues presented the invention of NOR flash in 1984, and then NAND flash in 1987.
Toshiba commercialized NAND flash memory in 1987. Developments in technology and economies of scale have made possible so-called Very Large Memory (VLM) computers. == Volatile memory == Volatile memory is computer memory that requires power to maintain the stored information.
Synchronous dynamic random-access memory (SDRAM) later debuted with the Samsung KM48SL2000 chip in 1992. The term memory is also often used to refer to non-volatile memory, specifically flash memory.
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