A JFET has a large input impedance (sometimes on the order of 1010 ohms), which means that it has a negligible effect on external components or circuits connected to its gate. == History == A succession of FET-like devices was patented by Julius Lilienfeld in the 1920s and 1930s.
A JFET has a large input impedance (sometimes on the order of 1010 ohms), which means that it has a negligible effect on external components or circuits connected to its gate. == History == A succession of FET-like devices was patented by Julius Lilienfeld in the 1920s and 1930s.
During the 1940s, researchers John Bardeen, Walter Houser Brattain, and William Shockley were trying to build a FET, but failed in their repeated attempts.
However, materials science and fabrication technology would require decades of advances before FETs could actually be manufactured. JFET was first patented by Heinrich Welker in 1945.
Watanabe applied for a patent for a similar device in 1950 termed static induction transistor (SIT).
Following Shockley's theoretical treatment on JFET in 1952, a working practical JFET was made in 1953 by George C.
Following Shockley's theoretical treatment on JFET in 1952, a working practical JFET was made in 1953 by George C.
The SIT is a type of JFET with a short channel. High-speed, high-voltage switching with JFETs became technically feasible following the commercial introduction of Silicon carbide (SiC) wide-bandgap devices in 2008.
By 2018, these manufacturing issues had been mostly resolved.
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