William Shockley

1910

(February 13, 1910 – August 12, 1989) was an American physicist and inventor.

A 2019 study in the journal Intelligence found him to be the second-most controversial (behind Arthur Jensen) intelligence researcher among 55 persons covered. ==Early life and education== Shockley was born to American parents in London on February 13, 1910, and was raised in his family's hometown of Palo Alto, California from the age of three.

1925

Finally they began to get some evidence of power amplification when Pearson, acting on a suggestion by Shockley, put a voltage on a droplet of glycol borate placed across a P–n junction. Bell Labs' attorneys soon discovered Shockley's field effect principle had been anticipated and devices based on it patented in 1930 by Julius Lilienfeld, who filed his MESFET-like patent in Canada on October 22, 1925.

1927

He spent two years at Palo Alto Military Academy, then briefly enrolled in the Los Angeles Coaching School to study physics and later graduated from Hollywood High School in 1927. Shockley earned his Bachelor of Science degree from Caltech in 1932 and a PhD from MIT in 1936.

1930

Finally they began to get some evidence of power amplification when Pearson, acting on a suggestion by Shockley, put a voltage on a droplet of glycol borate placed across a P–n junction. Bell Labs' attorneys soon discovered Shockley's field effect principle had been anticipated and devices based on it patented in 1930 by Julius Lilienfeld, who filed his MESFET-like patent in Canada on October 22, 1925.

1932

He spent two years at Palo Alto Military Academy, then briefly enrolled in the Los Angeles Coaching School to study physics and later graduated from Hollywood High School in 1927. Shockley earned his Bachelor of Science degree from Caltech in 1932 and a PhD from MIT in 1936.

1933

He came in eighth place in the primary, receiving 8,308 votes and 0.37% of the vote. ==Personal life== At age 23 and while still a student, Shockley married Jean Bailey in August 1933.

1936

He spent two years at Palo Alto Military Academy, then briefly enrolled in the Los Angeles Coaching School to study physics and later graduated from Hollywood High School in 1927. Shockley earned his Bachelor of Science degree from Caltech in 1932 and a PhD from MIT in 1936.

In 1938, he received his first patent, "Electron Discharge Device", on electron multipliers. ==Career== Shockley was one of the first recruits to Bell Labs by Mervin Kelly, who became director of research at the company in 1936 and focused on hiring solid-state physicists.

1938

In 1938, he received his first patent, "Electron Discharge Device", on electron multipliers. ==Career== Shockley was one of the first recruits to Bell Labs by Mervin Kelly, who became director of research at the company in 1936 and focused on hiring solid-state physicists.

1939

Shockley conceived a number of designs based on copper-oxide semiconductor materials, and with Walter Brattain unsuccessfully attempted to create a prototype in 1939. When World War II broke out, Shockley prior research was interrupted and he became involved in radar research in Manhattan (New York City).

1942

In May 1942, he took leave from Bell Labs to become a research director at Columbia University's Anti-Submarine Warfare Operations Group.

1944

This project required frequent trips to the Pentagon and Washington, where Shockley met many high-ranking officers and government officials. In 1944, he organized a training program for B-29 bomber pilots to use new radar bomb sights.

In late 1944 he took a three-month tour to bases around the world to assess the results.

1945

For this project, Secretary of War Robert Patterson awarded Shockley the Medal for Merit on October 17, 1946. In July 1945, the War Department asked Shockley to prepare a report on the question of probable casualties from an invasion of the Japanese mainland.

1946

For this project, Secretary of War Robert Patterson awarded Shockley the Medal for Merit on October 17, 1946. In July 1945, the War Department asked Shockley to prepare a report on the question of probable casualties from an invasion of the Japanese mainland.

The rapport of the group was excellent, and ideas were freely exchanged. By the winter of 1946 they had enough results that Bardeen submitted a paper on the surface states to Physical Review.

Shockley is interred at Alta Mesa Memorial Park in Palo Alto, California. ==Honors== National Medal of Merit, for his war work in 1946. Comstock Prize in Physics of the National Academy of Sciences in 1953. First recipient of the Oliver E.

1948

Shockley was also dissatisfied with certain parts of the explanation for how the point contact transistor worked and conceived of the possibility of minority carrier injection. On February 13, 1948 another team member, John N.

He also admitted that he kept some of his own work secret until his "hand was forced" by Shive's 1948 advance.

25, 1951; His earliest applied for (June 26, 1948) patent involving transistors. Oct.

1949

Shockley worked out a rather complete description of what he called the "sandwich" transistor, and a first proof of principle was obtained on April 7, 1949. Meanwhile, Shockley worked on his magnum opus, Electrons and Holes in Semiconductors which was published as a 558-page treatise in 1950.

1950

The three scientists were jointly awarded the 1956 Nobel Prize in Physics for "their researches on semiconductors and their discovery of the transistor effect". Partly as a result of Shockley's attempts to commercialize a new transistor design in the 1950s and 1960s, California's "Silicon Valley" became a hotbed of electronics innovation.

Shockley worked out a rather complete description of what he called the "sandwich" transistor, and a first proof of principle was obtained on April 7, 1949. Meanwhile, Shockley worked on his magnum opus, Electrons and Holes in Semiconductors which was published as a 558-page treatise in 1950.

4, 1950; his first granted patent involving transistors. Sept.

1951

This seminal work became the reference text for other scientists working to develop and improve new variants of the transistor and other devices based on semiconductors. This resulted in his invention of the bipolar "junction transistor", which was announced at a press conference on July 4, 1951. In 1951, he was elected to the National Academy of Sciences (NAS).

Bardeen began pursuing a theory for superconductivity and left Bell Labs in 1951.

25, 1951; His earliest applied for (June 26, 1948) patent involving transistors. Oct.

1953

Shockley is interred at Alta Mesa Memorial Park in Palo Alto, California. ==Honors== National Medal of Merit, for his war work in 1946. Comstock Prize in Physics of the National Academy of Sciences in 1953. First recipient of the Oliver E.

Buckley Solid State Physics Prize of the American Physical Society in 1953. Co-recipient of the Nobel Prize in physics in 1956, along with John Bardeen and Walter Brattain.

13, 1953; Used in computers. Apr.

1956

The three scientists were jointly awarded the 1956 Nobel Prize in Physics for "their researches on semiconductors and their discovery of the transistor effect". Partly as a result of Shockley's attempts to commercialize a new transistor design in the 1950s and 1960s, California's "Silicon Valley" became a hotbed of electronics innovation.

Neither Bardeen nor Brattain had much to do with the development of the transistor beyond the first year after its invention. ===Shockley Semiconductor=== In 1956 Shockley moved from New Jersey to Mountain View, California to start Shockley Semiconductor Laboratory to live closer to his ailing and elderly mother in Palo Alto, California.

The company, a division of Beckman Instruments, Inc., was the first establishment working on silicon semiconductor devices in what came to be known as Silicon Valley. After he received the Nobel Prize in 1956 his demeanor changed, as evidenced in his increasingly autocratic, erratic and hard-to-please management style.

Over the course of the next 20 years, more than 65 new enterprises would end up having employee connections back to Fairchild. A group of about thirty colleagues who had met on and off since 1956 met again at Stanford in 2002 to reminisce about their time with Shockley and his central role in sparking the information technology revolution.

Buckley Solid State Physics Prize of the American Physical Society in 1953. Co-recipient of the Nobel Prize in physics in 1956, along with John Bardeen and Walter Brattain.

10, Niels Bohr Library & Archives, American Institute of Physics, College Park, MD USA Playboy 1980, William Shockley interview with Playboy ==Notes== === Other notes === ==References== http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=04050875 ==Further reading== ==External links== National Academy of Sciences biography including his Nobel Lecture, December 11, 1956 Transistor Technology Evokes New Physics PBS biography Gordon Moore.

1957

In late 1957, eight of Shockley's researchers, who would come to be known as the "traitorous eight", resigned after Shockley decided not to continue research into silicon-based semiconductors.

2, 1957; The diffusion process for implantation of impurities. Apr.

Shockley (1967) "On the Statistics of Individual Variations of Productivity in Research Laboratories", Shockley 1957 Heredity: * Shockley 1965, "Is Quality of US Population Declining." U.S.

1960

The three scientists were jointly awarded the 1956 Nobel Prize in Physics for "their researches on semiconductors and their discovery of the transistor effect". Partly as a result of Shockley's attempts to commercialize a new transistor design in the 1950s and 1960s, California's "Silicon Valley" became a hotbed of electronics innovation.

This structure went on to be used for the vast majority of all transistors into the 1960s, and evolved into the bipolar junction transistor.

1962

24, 1962; Improvements on process for production of basic materials. Sept.

11, 1962; Exploring other semiconductors. ==Bibliography== ===Prewar scientific articles by Shockley=== An Electron Microscope for Filaments: Emission and Adsorption by Tungsten Single Crystals, R.

1963

The group's organizer said, "Shockley is the man who brought silicon to Silicon Valley." ==Views on race and eugenics== After Shockley left his role as director of Shockley Semiconductor, he joined Stanford University, where in 1963 he was appointed the Alexander M.

1965

Shockley (1967) "On the Statistics of Individual Variations of Productivity in Research Laboratories", Shockley 1957 Heredity: * Shockley 1965, "Is Quality of US Population Declining." U.S.

1966

68–71 * Shockley 1966, "Possible Transfer of Metallurgical and Astronomical Approaches to Problem of Environment versus Ethnic Heredity" (on an early form of admixture analysis) * Shockley 1966, "Population Control or Eugenics." In J.

1974

(1966) Shockley, William and Pearson, Roger – Shockley on Eugenics and Race: The Application of Science to the Solution of Human Problems, Scott-Townsend (1992) ===Interviews=== Interview of William Shockley by Lillian Hoddeson on 1974 Sep.

Biography of William Shockley Time Magazine Interview with Shockley biographer Joel Shurkin Interview of William Shockley by Lillian Hoddeson in 1974 History of the transistor William Shockley (IEEE Global History Network) Shockley and Bardeen-Brattain patent disputes William Shockley vs.

1975

Poniatoff Professor of Engineering and Applied Science, in which position he remained until his retirement as professor emeritus in 1975.

1980

10, Niels Bohr Library & Archives, American Institute of Physics, College Park, MD USA Playboy 1980, William Shockley interview with Playboy ==Notes== === Other notes === ==References== http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=04050875 ==Further reading== ==External links== National Academy of Sciences biography including his Nobel Lecture, December 11, 1956 Transistor Technology Evokes New Physics PBS biography Gordon Moore.

1981

Epps argued that "William Shockley's position lends itself to racist interpretations". In 1981, Shockley filed a libel suit in Atlanta against the Atlanta Constitution after a science writer, Roger Witherspoon, compared Shockley's advocacy of a voluntary sterilization program to Nazi human experimentation.

1982

His habit of saving all his papers (including laundry lists) provides abundant documentation for researchers on his life. Shockley was a candidate for the Republican nomination in the 1982 United States Senate election in California.

1989

(February 13, 1910 – August 12, 1989) was an American physicist and inventor.

However, Shockley's controversial views brought the Repository for Germinal Choice a degree of notoriety and may have discouraged other Nobel Prize winners from donating sperm. ===Death=== Shockley died of prostate cancer in 1989 at the age of 79.

2002

Over the course of the next 20 years, more than 65 new enterprises would end up having employee connections back to Fairchild. A group of about thirty colleagues who had met on and off since 1956 met again at Stanford in 2002 to reminisce about their time with Shockley and his central role in sparking the information technology revolution.

2019

A 2019 study in the journal Intelligence found him to be the second-most controversial (behind Arthur Jensen) intelligence researcher among 55 persons covered. ==Early life and education== Shockley was born to American parents in London on February 13, 1910, and was raised in his family's hometown of Palo Alto, California from the age of three.

2020

Several climbing guidebooks changed the route's name to "The Ceiling" in 2020 due to controversy associated with Shockley's eugenics research.




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